MOSFET Design Leader

This role need to work in our
China office.

Key Responsibilities

• Device Design & Simulation:
• Design and optimize power MOSFET structures (e.g., Trench MOSFET, Shielded Gate Trench, Super-Junction MOSFET) using Technology Computer-Aided Design (TCAD) tools.
• Perform detailed 2D and 3D simulations to analyze and optimize key device parameters, including on-resistance (Rds(on)), breakdown voltage (BV), gate charge (Qg/Qgd), and switching performance.
• Develop and validate compact models (e.g., SPICE, BSIM) for circuit-level simulation and system integration.
• Process Development & Integration:
• Collaborate closely with wafer foundries to define process flows, device architectures, and design rules.
• Analyze silicon data from test chips and development lots to correlate simulation results with electrical measurements, and drive process improvements.
• Evaluate the impact of process variations on device performance and robustness (e.g., corner analysis).
• Product Engineering & Support:
• Support the product engineering team through the product qualification phase, including reliability testing (HTRB, H3TRB, ESD, etc.) and failure analysis.
• Troubleshoot device performance issues and provide expert guidance to cross-functional teams, including applications, test, and failure analysis engineers.
• Create and maintain detailed design documentation, including simulation reports, test plans, and product specifications.
• Innovation & Research:
• Stay abreast of the latest industry trends, emerging technologies, and competitor products in the power semiconductor space.
• Propose and investigate novel device concepts and process innovations to maintain our competitive edge.
• Contribute to the company's intellectual property portfolio by drafting invention disclosures and patents.

Required Qualifications

• Education:
  Master's degree or Ph.D. in Electrical Engineering, Physics, or a related field. A Bachelor's degree with significant, relevant industry experience will be considered.
• Experience:
• 10+ years of direct experience in power semiconductor device design and development.
• Proven experience with TCAD simulation tools (e.g., Synopsys Sentaurus, Silvaco Atlas).
• Strong understanding of semiconductor device physics, including MOSFET operation, breakdown mechanisms, and reliability physics.
• Hands-on experience with semiconductor process integration and device characterization.
• Familiarity with lab equipment such as parameter analyzers (e.g., Keysight B1500), oscilloscopes, and curve tracers.
• Technical Skills:
• Deep knowledge of power MOSFET technologies (Trench, SGT, SJ, etc.) and their trade-offs.
• Experience with statistical data analysis and DOE (Design of Experiments) methodologies.
• Proficiency in scripting languages (e.g., Python, Perl) for automation of simulation and data analysis is a plus.
• Soft Skills:
• Excellent problem-solving and analytical skills.
• Strong verbal and written communication skills, with the ability to present complex technical information clearly.
• Ability to work effectively in a collaborative, cross-functional team environment.
• Self-motivated with a strong sense of ownership and a passion for technical excellence.

Preferred Qualifications

• Experience with automotive (AEC-Q101) or high-reliability product qualification standards.
• Experience with Gallium Nitride (GaN) or Silicon Carbide (SiC) device design.
• Experience with EDA tools for layout (e.g., Cadence Virtuoso) and LVS/DRC.
• 器件设计与仿真:
• 使用技术计算机辅助设计(TCAD)工具设计和优化功率MOSFET结构(例如,沟槽MOSFET、屏蔽栅沟槽、超级结MOSFET)。
• 执行详细的2D和3D仿真,以分析和优化关键器件参数,包括导通电阻(Rds(on))、击穿电压(BV)、栅极电荷(Qg/Qgd)和开关性能。
• 开发和验证用于电路级仿真和系统集成的紧凑模型(例如,SPICE、BSIM)。
• 工艺开发与集成:
• 与晶圆代工厂紧密合作,定义工艺流程、器件架构和设计规则。
• 分析测试芯片和开发批量中的硅数据,将仿真结果与电气测量结果进行关联,并推动工艺改进。
• 评估工艺变化对器件性能和稳健性的影响(例如,角落分析)。
• 产品工程与支持:
• 通过产品验证阶段支持产品工程团队,包括可靠性测试(HTRB、H3TRB、ESD等)和故障分析。
• 解决器件性能问题,向跨职能团队(包括应用、测试和故障分析工程师)提供专业指导。
• 创建并维护详细的设计文档,包括仿真报告、测试计划和产品规范。
• 创新与研究:
• 了解电力半导体领域的最新行业趋势、新兴技术和竞争对手产品。
• 提出和调查新的器件概念和工艺创新,以保持我们的竞争优势。
• 通过撰写发明披露和专利来贡献公司的知识产权组合。

必需资格

• 教育背景:
  电气工程、物理或相关领域的硕士学位或博士学位。拥有显著、相关行业经验的学士学位也会被考虑。
• 经验:
• 10年以上功率半导体器件设计和开发的直接经验。
• 具有使用TCAD仿真工具(例如,Synopsys Sentaurus,Silvaco Atlas)的经验。
• 对半导体器件物理有深入的理解,包括MOSFET操作、击穿机制和可靠性物理。
• 具备半导体工艺集成和器件表征的实践经验。
• 熟悉实验室设备,如参数分析仪(例如,Keysight B1500)、示波器和曲线跟踪器。
• 技术技能:
• 拥有深厚的功率MOSFET技术(沟槽、SGT、SJ等)及其权衡的知识。
• 具备统计数据分析和实验设计(DOE)方法的经验。
• 精通脚本语言(例如,Python,Perl)以进行仿真和数据分析的自动化尤佳。
• 软技能:
• 出色的问题解决和分析技能。
• 良好的口头和书面沟通能力,能够清晰地展示复杂的技术信息。
• 能够在合作的跨职能团队环境中有效工作。
• 自我激励,具有强烈的责任感和对技术卓越的热情。

优先条件

• 具有汽车(AEC-Q101)或高可靠性产品资格标准的经验。
• 具有氮化镓(GaN)或碳化硅(SiC)器件设计的经验。
• 具有布局EDA工具(例如,Cadence Virtuoso)和LVS/DRC的经验。